MRF300BN RF 300 W

Product discription:

MRF300BN RF Power LDMOS Transistors High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial,
scientific and medical applications and HF and VHF communications as well as
radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications.
Their unmatched input and output design allows for wide frequency range use
from 1.8 to 250 MHz

Features

• Unmatched input and output allowing wide frequency range
  utilization
• Two opposite pin--connection versions (A and B) to be used in
  a push--pull, two--up configuration for wideband performance
• Characterized from 30 to 50 V
• Suitable for linear application
• Integrated ESD protection with greater negative gate--source
  voltage range for improved Class C operation
• Typical Applications
  Industrial, scientific, medical (ISM)
  Laser generation
  Plasma etching
  Particle accelerators
  MRI and other medical applications
  Industrial heating, welding and drying systems
  Broadcast
  Radio broadcast
  VHF TV broadcast
  Mobile radio
  VHF base stations
  HF and VHF communications
  Switch mode power supplies